[Elsevier] Experimental study on transient temperature rise characteristics of RF GaN HEMTs

johnfive Post time The day before yesterday 23:52 | Show all posts |Read mode
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journalㄩMicroelectronics Reliability

AuthorsㄩShuai Wang; Shang Shi; Menglong Hao; Jingwen Zhang; Dunjun Chen

Published dateㄩ2026-8-

DOIㄩ10.1016/j.microrel.2026.116185

PDF linkㄩhttps://www.sciencedirect.com/sc ... 026271426001897/pdf

Article linkㄩhttps://doi.org/10.1016/j.microrel.2026.116185

Article SourceㄩElsevier BV﹝


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