[Other] Density functional theory calculations for investigation of atomic structures of 4H-SiC/SiO2 interface after NO annealing |
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Reward20points
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High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors
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Density functional theory calculations for investigation of atomic structures of 4H-SiC/SiO2 interface after NO annealing
