[Elsevier] Field-plated and back-barrier engineered wide-bandgap III-nitride/¦Â-Ga2O3 nano-HEMT for emerging RF/microwave micro/nanoelectronics applications

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journal£ºMicroelectronics Reliability

Authors£ºG. Purnachandra Rao; Trupti Ranjan Lenka; Hieu Pham Trung Nguyen

Published date£º2024-4-

DOI£º10.1016/j.microrel.2024.115365

PDF link£ºhttps://www.sciencedirect.com/sc ... 026271424000453/pdf

Article link£ºhttps://doi.org/10.1016/j.microrel.2024.115365

Article Source£ºElsevier BV¡£


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